Discrete Semiconductor Products

MCAC100N08Y-TP

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TRANS MOSFET N-CH 80V 100A 8-PIN DFN EP T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 80V 100A 8-PIN DFN EP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC100N08Y-TP

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	5469 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Vgs (Max)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [x]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Micro Commercial Components MCAC100N03Y-TP	35 W	2.5 V	2559 pF	100 A	-55 °C	150 °C	30 V	2.9 mOhm	DFN5060	43 nC	8-PowerTDFN	N-Channel	20 V	Surface Mount	MOSFET (Metal Oxide)
Micro Commercial Components MCAC100N08Y-TP		4 V	5469 pF	100 A	-55 °C	150 °C	80 V	4.5 mOhm	DFN5060		8-PowerTDFN	N-Channel	20 V	Surface Mount	MOSFET (Metal Oxide)	73 nC	10 V	51 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 100A 51W (Tj) Surface Mount DFN5060

Technical documentation and resources