Littelfuse-IXTP44P15T MOSFETs Trans MOSFET P-CH 150V 44A 3-Pin(3+Tab) TO-220

Discrete Semiconductor Products

IXTP26P10T

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET P-CH 100V 26A 3-PIN(3+TAB) TO-220AB

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Discrete Semiconductor Products

IXTP26P10T

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET P-CH 100V 26A 3-PIN(3+TAB) TO-220AB

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP26P10T

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3820 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4.5 V

IXTP26P10T Series

Disc Mosfet P Channel-Polar TO-220AB/FP

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTP26P20P	26 A	4 V	MOSFET (Metal Oxide)	10 V	-55 °C	175 ░C	TO-220-3	200 V	300 W	P-Channel	2740 pF	Through Hole	56 nC	170 mOhm	20 V	TO-220-3
Littelfuse/Commercial Vehicle Products IXTP26P10T	26 A	4.5 V	MOSFET (Metal Oxide)	10 V	-55 °C	150 °C	TO-220-3	100 V		P-Channel	3820 pF	Through Hole	52 nC		15 V	TO-220-3	150 W	90 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.63
Newark	Each	100	$ 2.73
		500	$ 2.49
		1000	$ 2.20
		2500	$ 2.04

Description

General part information

IXTP26P10T Series

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching

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Technical documentation and resources