Discrete Semiconductor Products

H5N2522LSTL-E

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NCH SINGLE POWER MOSFET 250V 20A 180MOHM LDPAK(S)-(1)/TO-263

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Discrete Semiconductor Products

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NCH SINGLE POWER MOSFET 250V 20A 180MOHM LDPAK(S)-(1)/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	H5N2522LSTL-E

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	180 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Single Power Mosfet 300V 40A 69Mohm To-3P

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Mounting Type	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Renesas Electronics Corporation H5N2522LSTL-E	N-Channel	1300 pF	20 A	150 °C	Surface Mount	SC-83	30 V	180 mOhm	MOSFET (Metal Oxide)	250 V	10 V	75 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The H5N3008P is a Nch Single Power Mosfet 300V 40A 69Mohm To-3P.

Technical documentation and resources