Discrete Semiconductor Products

FDG329N

Obsolete

MOSFET N-CH 20V 1.5A SC88

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1.5A SC88

Technical Specifications

Parameters and characteristics for this part

Specification	FDG329N

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	324 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	420 mW
Rds On (Max) @ Id, Vgs [Max]	90 mOhm
Supplier Device Package	SC-88 (SC-70-6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDG329N	4.6 nC	324 pF	SC-88 (SC-70-6)	420 mW	N-Channel	1.5 V	Surface Mount	2.5 V 4.5 V	12 V	6-TSSOP SC-88 SOT-363	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1.5 A	90 mOhm
ON Semiconductor FDG329N	4.6 nC	324 pF	SC-88 (SC-70-6)	420 mW	N-Channel	1.5 V	Surface Mount	2.5 V 4.5 V	12 V	6-TSSOP SC-88 SOT-363	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1.5 A	90 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6)

Technical documentation and resources