Specification	NVH4L110N65S3F

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	2530 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs [Max]	110 mOhm
Supplier Device Package	TO-247-4L
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

NVH4L110N65S3F Series

SUPERFET III MOSFET, 650V, 110mohm

Part	Vgs(th) (Max) @ Id	Package / Case	FET Type	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NVH4L110N65S3F	5 V	TO-247-4	N-Channel	Through Hole	MOSFET (Metal Oxide)	650 V	2530 pF	30 A	-55 °C	150 °C	TO-247-4L	59 nC	240 W	30 V	10 V	110 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.08
		30	$ 4.85
		120	$ 4.34
		510	$ 3.83
		1020	$ 3.45
		2010	$ 3.23
LCSC	Piece	1	$ 5.60
		10	$ 4.80
		30	$ 4.33
		100	$ 3.85
		500	$ 3.63
		1000	$ 3.54
Newark	Each	1	$ 7.35
		10	$ 6.64
		25	$ 5.94
		50	$ 5.42
		100	$ 5.28
		250	$ 5.17
ON Semiconductor	N/A	1	$ 2.91

Description

General part information

NVH4L110N65S3F Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability