Discrete Semiconductor Products

PSMN6R3-120PS

Obsolete

MOSFET N-CH 120V 70A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 120V 70A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R3-120PS

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	207.1 nC
Input Capacitance (Ciss) (Max) @ Vds	11384 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	6.7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)
Freescale Semiconductor - NXP PSMN6R3-120PS	N-Channel	Through Hole	TO-220AB	120 V	-55 °C	175 ░C	TO-220-3	6.7 mOhm	207.1 nC	70 A	10 V	11384 pF	MOSFET (Metal Oxide)	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 120 V 70A (Tc) 405W (Tc) Through Hole TO-220AB

Technical documentation and resources