Discrete Semiconductor Products

SI3439KDWA-TP

Active

MOSFET N/P-CH 20V 0.75A SOT363

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V 0.75A SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	SI3439KDWA-TP

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	750 mA, 600 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.8 nC
Gate Charge (Qg) (Max) @ Vgs	0.86 nC
Input Capacitance (Ciss) (Max) @ Vds	40 pF, 33 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs	850 mOhm, 300 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Vgs(th) (Max) @ Id	FET Feature	Technology	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs
Micro Commercial Components SI3439KDW-TP	1.1 V	Logic Level Gate	MOSFET (Metal Oxide)	150 °C	113 pF 120 pF	20 V	N and P-Channel	6-TSSOP SC-88 SOT-363	660 mA 750 mA	SOT-363	380 mOhm 520 mOhm	Surface Mount
Micro Commercial Components SI3439KDWA-TP	1.1 V	Logic Level Gate	MOSFET (Metal Oxide)		33 pF 40 pF	20 V	N and P-Channel	6-TSSOP SC-88 SOT-363	600 mA 750 mA	SOT-363	300 mOhm 850 mOhm	Surface Mount	-55 °C	150 °C	0.8 nC	0.86 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 20V 750mA, 600mA 150mW Surface Mount SOT-363

Technical documentation and resources