Discrete Semiconductor Products

PSMN1R5-30BLEJ

Active

Freescale Semiconductor - NXP

MOSFET N-CH 30V 120A D2PAK

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

PSMN1R5-30BLEJ

Active

Freescale Semiconductor - NXP

MOSFET N-CH 30V 120A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R5-30BLEJ

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	228 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	14934 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	401 W
Rds On (Max) @ Id, Vgs [Max]	1.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

PSMN1R5-25MLH Series

N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

Part	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Freescale Semiconductor - NXP PSMN1R5-30YL,115	1.5 mOhm	Surface Mount	N-Channel	20 V	LFPAK56 Power-SO8	2.15 V	MOSFET (Metal Oxide)	100 A	-55 °C	175 ░C	4.5 V 10 V	109 W	77.9 nC	30 V	SC-100 SOT-669	5057 pF
Freescale Semiconductor - NXP PSMN1R5-25MLHX	1.81 mOhm	Surface Mount	N-Channel	20 V	LFPAK33		MOSFET (Metal Oxide)	150 A	-55 °C	175 ░C	4.5 V 10 V			25 V			3167 pF	2.2 V	58 nC	106 W
Freescale Semiconductor - NXP PSMN1R5-30YLC,115	1.55 mOhm	Surface Mount	N-Channel	20 V	LFPAK56 Power-SO8		MOSFET (Metal Oxide)	100 A	-55 °C	175 ░C	4.5 V 10 V	179 W		30 V	SC-100 SOT-669		4044 pF		65 nC
Freescale Semiconductor - NXP PSMN1R5-30BLEJ		Surface Mount	N-Channel	20 V	D2PAK	2.15 V	MOSFET (Metal Oxide)	120 A	-55 °C	175 ░C	4.5 V 10 V			30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	14934 pF			228 nC	401 W	1.5 mOhm
Freescale Semiconductor - NXP PSMN1R5-40PS,127	1.6 mOhm	Through Hole	N-Channel	20 V	TO-220AB		MOSFET (Metal Oxide)	120 A	-55 °C	175 ░C	10 V		136 nC	40 V	TO-220-3		9710 pF			338 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.27
		10	$ 3.58
		100	$ 2.90
	Digi-Reel®	1	$ 4.27
		10	$ 3.58
		100	$ 2.90
	Tape & Reel (TR)	800	$ 2.06

Description

General part information

PSMN1R5-25MLH Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSSleakage and high efficiency. Rated to 150 A and optimized with low gate resistance (RG) for fast-switching applications.

Documents

Technical documentation and resources