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TO-252-3
Discrete Semiconductor Products

NVD6416ANLT4G-001-VF01

Obsolete
ON Semiconductor

MOSFET N-CH 100V 19A DPAK

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TO-252-3
Discrete Semiconductor Products

NVD6416ANLT4G-001-VF01

Obsolete
ON Semiconductor

MOSFET N-CH 100V 19A DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVD6416ANLT4G-001-VF01
Current - Continuous Drain (Id) @ 25°C19 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)71 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs74 mOhm
Supplier Device PackageDPAK-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NVD6415AN Series

Automotive Power MOSFET. 100V, 23A, 55 mΩ, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

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