
Discrete Semiconductor Products
NVD6416ANLT4G-001-VF01
ObsoleteON Semiconductor
MOSFET N-CH 100V 19A DPAK
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Discrete Semiconductor Products
NVD6416ANLT4G-001-VF01
ObsoleteON Semiconductor
MOSFET N-CH 100V 19A DPAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVD6416ANLT4G-001-VF01 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 71 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 74 mOhm |
| Supplier Device Package | DPAK-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVD6415AN Series
Automotive Power MOSFET. 100V, 23A, 55 mΩ, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources
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