Specification	FQAF16N50

Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQAF16N50 Series

Power MOSFET, N-Channel, QFET®, 500 V, 11.3 A, 320 mΩ, TO-3PF

Part	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQAF16N50	5 V	TO-3P-3 Full Pack	110 W	500 V	TO-3PF	-55 °C	150 °C	320 mOhm	30 V	MOSFET (Metal Oxide)	Through Hole	N-Channel	75 nC	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	108	$ 2.79

Description

General part information

FQAF16N50 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.