NTBG023N065M3S

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ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 23 MOHM, 650 V, M3S, D2PAK-7L

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DocumentsDatasheet Package Drawing-418BJ-D2PAK7 (TO-263-7L HV)

Discrete Semiconductor Products

NTBG023N065M3S

Active

ON Semiconductor

SILICON CARBIDE (SIC) MOSFET - ELITESIC, 23 MOHM, 650 V, M3S, D2PAK-7L

Deep-Dive with AI

DocumentsDatasheet Package Drawing-418BJ-D2PAK7 (TO-263-7L HV)

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Technical Specifications

Parameters and characteristics for this part

Specification	NTBG023N065M3S

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NTBG023N065M3S Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L

Part
ON Semiconductor NTBG023N065M3S

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	800	$ 5.48
ON Semiconductor	N/A	1	$ 5.85

Description

General part information

NTBG023N065M3S Series

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.