Discrete Semiconductor Products

PNE20020ERX

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DIODE GEN PURP 200V 2A SOD123W

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Discrete Semiconductor Products

Active

DIODE GEN PURP 200V 2A SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	PNE20020ERX

Capacitance @ Vr, F	17 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	200 nA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	SOD-123W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	980 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Qualification	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Grade	Package / Case
Freescale Semiconductor - NXP PNE20020ERX	200 V	200 mA 500 ns	SOD-123W	AEC-Q101	17 pF	175 °C	200 nA	25 ns	Surface Mount	2 A	980 mV	Standard	Automotive	SOD-123W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 2A Surface Mount SOD-123W

Technical documentation and resources