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onsemi-MSD602-RT1G GP BJT Trans GP BJT NPN 50V 0.5A 200mW 3-Pin SC-59 T/R
Discrete Semiconductor Products

MSD602-RT1G

Active
ON Semiconductor

TRANS GP BJT NPN 50V 0.5A 200MW 3-PIN SC-59 T/R

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onsemi-MSD602-RT1G GP BJT Trans GP BJT NPN 50V 0.5A 200mW 3-Pin SC-59 T/R
Discrete Semiconductor Products

MSD602-RT1G

Active
ON Semiconductor

TRANS GP BJT NPN 50V 0.5A 200MW 3-PIN SC-59 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationMSD602-RT1G
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]200 mW
Supplier Device PackageSC-59
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.16
DigikeyCut Tape (CT) 1$ 0.17
10$ 0.10
100$ 0.06
500$ 0.05
1000$ 0.04
Digi-Reel® 1$ 0.17
10$ 0.10
100$ 0.06
500$ 0.05
1000$ 0.04
Tape & Reel (TR) 3000$ 0.03
6000$ 0.03
9000$ 0.03
15000$ 0.03
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.02
300000$ 0.02
NewarkEach (Supplied on Cut Tape) 1$ 0.19
10$ 0.12
25$ 0.11
50$ 0.09
100$ 0.08
250$ 0.07
500$ 0.06
ON SemiconductorN/A 1$ 0.02

Description

General part information

MSD602-RT1 Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SC-59 package, which is designed for lower power surface mount applications.