Specification	NVD6820NLT4G-VF01

Current - Continuous Drain (Id) @ 25°C	50 A, 10 A
Drain to Source Voltage (Vdss)	90 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	83 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4209 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	100 W, 4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	16.7 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NVD6820NL Series

Single N−Channel Power MOSFET 90V, 50A, 17mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Qualification	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Technology	FET Type	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVD6820NLT4G-VF01	10 A 50 A	4.5 V 10 V	20 V	2.5 V	AEC-Q101	16.7 mOhm	83 nC	90 V	4 W 100 W	Surface Mount	MOSFET (Metal Oxide)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	-55 °C	175 ░C	Automotive	4209 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVD6820NL Series

Automotive Power MOSFET. 90V, 50A, 16.7 mOhm, Single N-Channel DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.