Discrete Semiconductor Products

HER606GP-TP

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RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 6A, 600V V(RRM), SILICON,

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Discrete Semiconductor Products

Active

RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 6A, 600V V(RRM), SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	HER606GP-TP

Capacitance @ Vr, F	65 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type
Micro Commercial Components HER606GP-TP	200 mA 500 ns	6 A	65 pF	R-6	R-6 Axial	600 V	Standard	150 °C	-55 °C	1.7 V	75 ns	10 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 6A Through Hole R-6

Technical documentation and resources

No documents available