Discrete Semiconductor Products
VS-40EPS12-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 40A TO247AC
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Discrete Semiconductor Products
VS-40EPS12-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 40A TO247AC
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-40EPS12-M3 |
|---|---|
| Current - Average Rectified (Io) | 40 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-2 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-247AC Modified |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.24 | |
| 25 | $ 4.16 | |||
| 100 | $ 3.56 | |||
| 500 | $ 3.17 | |||
| 1000 | $ 2.71 | |||
| 2000 | $ 2.55 | |||
Description
General part information
40EPS12 Series
Diode 1200 V 40A Through Hole TO-247AC Modified
Documents
Technical documentation and resources