Specification	NTTFS4941NTWG

Current - Continuous Drain (Id) @ 25°C	8.3 A
Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1619 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	840 mW, 25.5 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NTTFS4941N Series

Single N-Channel Power MOSFET 30V, 46A, 6.2mΩ

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor NTTFS4941NTWG	MOSFET (Metal Oxide)	1619 pF	N-Channel	4.5 V 10 V	-55 °C	150 °C	8-PowerWDFN	8.3 A	46 A	8-WDFN (3.3x3.3)	Surface Mount	20 V	22.8 nC	30 V	25.5 W 840 mW	2.2 V	6.2 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This is a 30 V N-Channel Power MOSFET.

Technical documentation and resources