Discrete Semiconductor Products

B40C800G-E4/51

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BRIDGE RECT 1PHASE 65V 900MA WOG

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 65V 900MA WOG

Technical Specifications

Parameters and characteristics for this part

Specification	B40C800G-E4/51

Current - Average Rectified (Io)	900 mA
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	4-Circular, WOG
Supplier Device Package	WOG
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max)	65 V

Part	Package / Case	Technology	Supplier Device Package	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type
Vishay General Semiconductor - Diodes Division B40C800G-E4/51	4-Circular WOG	Standard	WOG	Single Phase	-40 °C	125 ¯C	65 V	1 V	10 µA	900 mA	Through Hole
Vishay General Semiconductor - Diodes Division B40C1500G-E4/51	4-Circular WOG	Standard	WOG	Single Phase	-40 °C	125 ¯C	65 V	1 V	10 µA	1.5 A	Through Hole
Vishay General Semiconductor - Diodes Division B40C800DM-E3/45	4-EDIP (0.300" 7.62mm)	Standard	DFM	Single Phase	-40 °C	125 ¯C	65 V	1 V	10 µA	900 mA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 65 V Through Hole WOG

Technical documentation and resources