Specification	BD433S

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	36 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	22 V

BD433 Series

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type
ON Semiconductor BD433S	100 µA	NPN	36 W	3 MHz	22 V	500 mV	150 °C	TO-126-3 TO-225AA	4 A	TO-126-3	40 hFE	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1044	$ 0.29

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources