FPF2C110BI07AS2

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IGBT MODULE 650V 40A 300W F2

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Discrete Semiconductor Products

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IGBT MODULE 650V 40A 300W F2

Technical Specifications

Parameters and characteristics for this part

Specification	FPF2C110BI07AS2

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	250 µA
Input	Standard
Mounting Type	Through Hole
NTC Thermistor	True
Package / Case	30-DIP Module
Power - Max [Max]	300 W
Supplier Device Package	F2
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Input	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Configuration	Power - Max [Max]	Supplier Device Package	Package / Case	NTC Thermistor	Mounting Type	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max) [Max]
ON Semiconductor FPF2C110BI07AS2	Standard	40 A	650 V	Half Bridge	300 W	F2	30-DIP Module		Through Hole	2.3 V	250 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 650 V 40 A 300 W Through Hole F2

Technical documentation and resources

No documents available