Discrete Semiconductor Products

SIS782DN-T1-GE3

Active

MOSFET N-CH 30V 16A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 16A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS782DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	30.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1025 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max) [Max]	41 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	FET Feature	Package / Case	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division SIS782DN-T1-GE3	MOSFET (Metal Oxide)	16 A	N-Channel	20 V	Schottky Diode (Body)	PowerPAK® 1212-8	PowerPAK® 1212-8	41 W	2.3 V	Surface Mount	9.5 mOhm	1025 pF	30 V	4.5 V 10 V	30.5 nC	150 °C	-50 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 16A (Tc) 41W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources