Discrete Semiconductor Products

IMBD4148-E3-18

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DIODE GEN PURP 75V 150MA SOT23-3

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Discrete Semiconductor Products

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DIODE GEN PURP 75V 150MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	IMBD4148-E3-18

Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	2.5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Reverse Recovery Time (trr)	Speed	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Package / Case
Vishay General Semiconductor - Diodes Division IMBD4148-E3-18	4 ns	Any Speed	200 mA	Standard	75 V	SOT-23-3	Surface Mount	150 mA	1 V	150 °C	2.5 µA	SC-59 SOT-23-3 TO-236-3

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General part information

Diode 75 V 150mA Surface Mount SOT-23-3

Technical documentation and resources