
Discrete Semiconductor Products
RN4611(TE85L,F)
ActiveToshiba Semiconductor and Storage
DIGITAL TRANSISTORS SM6 PLN (LF) TRANSISTOR PD=300MW F=1MHZ
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Discrete Semiconductor Products
RN4611(TE85L,F)
ActiveToshiba Semiconductor and Storage
DIGITAL TRANSISTORS SM6 PLN (LF) TRANSISTOR PD=300MW F=1MHZ
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RN4611(TE85L,F) |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 300 mW |
| Supplier Device Package | SM6 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RN4611 Series
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6
Documents
Technical documentation and resources