Specification	2SB1121S-TD-E

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	500 mW
Supplier Device Package	PCP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

2SB1121 Series

Bipolar Transistor, -25V, -2A, Low VCE(sat) PNP Single PCP

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
ON Semiconductor 2SB1121T-TD-E	2 A	150 °C	Surface Mount	500 mW	100	100 nA	25 V	TO-243AA	PCP	PNP	600 mV	150 MHz
ON Semiconductor 2SB1121S-TD-E	2 A	150 °C	Surface Mount	500 mW	100	100 nA	25 V	TO-243AA	PCP	PNP	600 mV	150 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

2SB1121 is Bipolar Transistor, -25V, -2A, Low VCE(sat) PNP Single PCP.

Technical documentation and resources