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TO-220
Discrete Semiconductor Products

AOTF15B65M1

NRND

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TO-220
Discrete Semiconductor Products

AOTF15B65M1

NRND

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAOTF15B65M1
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Pulsed (Icm)45 A
Gate Charge32 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]36 W
Reverse Recovery Time (trr)317 ns
Supplier Device PackageTO-220
Switching Energy290 µJ, 200 µJ
Td (on/off) @ 25°C [custom]94 ns
Td (on/off) @ 25°C [custom]15 ns
Test Condition15 A, 20 Ohm, 400 V, 15 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.08
Tube 1000$ 1.13

Description

General part information

AOTF15 Series

IGBT 650 V 30 A 36 W Through Hole TO-220

Documents

Technical documentation and resources