Discrete Semiconductor Products
RUM001L02T2CL
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 20 V, 100 MA, 2.5 OHM, VMT, SURFACE MOUNT
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Discrete Semiconductor Products
RUM001L02T2CL
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 20 V, 100 MA, 2.5 OHM, VMT, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RUM001L02T2CL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.2 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7.1 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-723 |
| Power Dissipation (Max) [Max] | 150 mW |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm |
| Supplier Device Package | VMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RUM001L02 Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Documents
Technical documentation and resources