Discrete Semiconductor Products

TSM061NA03CV RGG

Obsolete

MOSFETS 30V 66A SINGLE N-CHA NNEL POWER MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFETS 30V 66A SINGLE N-CHA NNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	TSM061NA03CV RGG

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1136 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	44.6 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	3.1
Supplier Device Package [y]	3.1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case
Taiwan Semiconductor Corporation TSM061NA03CV RGG	20 V	8-PDFN	3.1	3.1	1136 pF	44.6 W	19.3 nC	MOSFET (Metal Oxide)	150 °C	-55 °C	2.5 V	4.5 V 10 V	30 V	N-Channel	6.1 mOhm	Surface Mount	66 A	8-PowerWDFN

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General part information

N-Channel 30 V 66A (Tc) 44.6W (Tc) Surface Mount 8-PDFN (3.1x3.1)

Technical documentation and resources

No documents available