Discrete Semiconductor Products

SI3805DV-T1-GE3

Obsolete

MOSFET P-CH 20V 3.3A 6TSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 3.3A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3805DV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	330 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.1 W, 1.4 W
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Feature	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SI3805DV-T1-GE3	P-Channel	-55 °C	150 °C	330 pF	20 V	12 nC	84 mOhm	SOT-23-6 Thin TSOT-23-6	1.5 V	Surface Mount	MOSFET (Metal Oxide)	6-TSOP	1.1 W 1.4 W	3.3 A	12 V	Schottky Diode (Isolated)	10 V	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 3.3A (Tc) 1.1W (Ta), 1.4W (Tc) Surface Mount 6-TSOP

Technical documentation and resources