Specification	FJP2145TU

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	15 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	120 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	800 V

FJP2145 Series

ESBC Rated NPN Power Transistor

Part	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max)	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FJP2145TU	15 MHz	Through Hole	5 A	125 ¯C	-55 °C	20	120 W	10 µA	TO-220-3	NPN	2 V	TO-220-3	800 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FJP2145 Series

The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a high voltage TO-220 package.