Discrete Semiconductor Products

BUK9E1R8-40E,127

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MOSFET N-CH 40V 120A I2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 120A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9E1R8-40E,127

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	120 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	16400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	I2PAK
Power Dissipation (Max)	349 W
Qualification	AEC-Q101
Rds On (Max)	1.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

Part	Grade	Gate Charge (Max)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Package Name	Vgs (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max)	Qualification	Current - Continuous Drain (Id) (Tc)
NXP USA Inc. BUK9E1R8-40E,127	Automotive	120 nC	N-Channel	10 V	5 V	1.7 mOhm	I2PAK	10 V	349 W	-55 °C	175 °C	2.1 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	40 V	MOSFET (Metal Oxide)	16400 pF	AEC-Q101	120 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 40 V 120A (Tc) 349W (Tc) Through Hole I2PAK

Technical documentation and resources