FCH35N60
ObsoletePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 35 A, 98 MΩ, TO-247
FCH35N60
ObsoletePOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP>, EASY DRIVE, 600 V, 35 A, 98 MΩ, TO-247
Technical Specifications
Parameters and characteristics for this part
| Specification | FCH35N60 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 181 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 312.5 W |
| Rds On (Max) @ Id, Vgs | 98 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FCH35N60 Series
SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Documents
Technical documentation and resources