
Discrete Semiconductor Products
PDTA123YS,126
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS PNP 50V TO92-3
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Discrete Semiconductor Products
PDTA123YS,126
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS PNP 50V TO92-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PDTA123YS,126 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 |
| Power - Max [Max] | 500 mW |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | TO-92-3 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PDTA123 Series
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
Documents
Technical documentation and resources