Discrete Semiconductor Products

FDA62N28

Obsolete

MOSFET N-CH 280V 62A TO3PN

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 280V 62A TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	FDA62N28

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	280 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	4630 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	51 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id
ON Semiconductor FDA62N28	62 A	4630 pF	500 W	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	-55 °C	150 °C	N-Channel	100 nC	51 mOhm	280 V	10 V	TO-3PN	30 V	Through Hole	5 V
ON Semiconductor FDA62N28	62 A	4630 pF	500 W	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	-55 °C	150 °C	N-Channel	100 nC	51 mOhm	280 V	10 V	TO-3PN	30 V	Through Hole	5 V

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General part information

N-Channel 280 V 62A (Tc) 500W (Tc) Through Hole TO-3PN

Technical documentation and resources