Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK761R4-30E,118 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 130 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 9580 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | D2PAK |
| Power Dissipation (Max) | 324 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.45 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
| Part | Vgs (Max) | Qualification | Technology | Current - Continuous Drain (Id) (Tc) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) | Rds On (Max) | Grade | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package Name | Power Dissipation (Max) | Package / Case | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | ||||||||||||||||||
 NXP USA Inc. | 20 V | AEC-Q101 | MOSFET (Metal Oxide) | 63 A | 100 V | 4 V | Surface Mount | N-Channel | 4373 pF | 20 mOhm | Automotive | -55 °C | 175 °C | 10 V | D2PAK | 200 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |
NXP USA Inc. | 20 V | AEC-Q101 | MOSFET (Metal Oxide) | 64 A | 100 V | 4 V | Surface Mount | N-Channel | 3400 pF | 19 mOhm | Automotive | -55 °C | 175 °C | 10 V | D2PAK | 200 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 53 nC |
NXP USA Inc. | 20 V | AEC-Q101 | MOSFET (Metal Oxide) | 47 A | 55 V | 4 V | Surface Mount | N-Channel | 1310 pF | 24 mOhm | Automotive | -55 °C | 175 °C | 10 V | D2PAK | 106 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |
NXP USA Inc. | ||||||||||||||||||
NXP USA Inc. | 20 V | MOSFET (Metal Oxide) | 65.7 A | 55 V | 4 V | Surface Mount | N-Channel | 2245 pF | 16 mOhm | -55 °C | 175 °C | 10 V | D2PAK | 138 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||
NXP USA Inc. | 20 V | MOSFET (Metal Oxide) | 75 A | 30 V | 4 V | Surface Mount | N-Channel | 6000 pF | 5 mOhm | -55 °C | 175 °C | 10 V | D2PAK | 230 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||
NXP USA Inc. | ||||||||||||||||||
NXP USA Inc. | 20 V | AEC-Q101 | MOSFET (Metal Oxide) | 120 A | 30 V | 4 V | Surface Mount | N-Channel | 9580 pF | 1.45 mOhm | Automotive | -55 °C | 175 °C | 10 V | D2PAK | 324 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 130 nC |
NXP USA Inc. | 20 V | AEC-Q101 | MOSFET (Metal Oxide) | 75 A | 55 V | 4 V | Surface Mount | N-Channel | 3271 pF | 9 mOhm | Automotive | -55 °C | 175 °C | 10 V | D2PAK | 211 W | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 62 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
| 5055 | $ 2.29 | |||
CAD
3D models and CAD resources for this part
Description
General part information
BUK76 Series
N-Channel 30 V 120A (Tc) 324W (Tc) Surface Mount D2PAK
Documents
Technical documentation and resources
No documents available