Discrete Semiconductor Products

SIA425EDJ-T1-GE3

Obsolete

MOSFET P-CH 20V 4.5A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4.5A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA425EDJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	15.6 W, 2.9 W
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1 V

Part	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Package Name	Mounting Type
Vishay Dale SIA425EDJ-T1-GE3	MOSFET (Metal Oxide)	-55 °C	150 °C	4.5 A	1 V	12 V	2.9 W 15.6 W	20 V	60 mOhm	P-Channel	4.5 V	1.8 V	PowerPAK® SC-70-6	PowerPAK® SC-70-6	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 4.5A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources