Discrete Semiconductor Products

SIA425EDJ-T1-GE3

Obsolete

MOSFET P-CH 20V 4.5A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4.5A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA425EDJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	15.6 W, 2.9 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIA425EDJ-T1-GE3	-55 °C	150 °C	PowerPAK® SC-70-6	60 mOhm	PowerPAK® SC-70-6	12 V	1 V	2.9 W 15.6 W	20 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	1.8 V 4.5 V	4.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 4.5A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources