Discrete Semiconductor Products

PSMNR89-25YLEX

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PSMNR89-25YLE/SOT669/LFPAK

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Discrete Semiconductor Products

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PSMNR89-25YLE/SOT669/LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR89-25YLEX

Current - Continuous Drain (Id) @ 25°C	270 A
Drain to Source Voltage (Vdss)	25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	7452 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	224 W
Rds On (Max) @ Id, Vgs	0.98 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Package / Case	Vgs (Max)	FET Type	Power Dissipation (Max)
Freescale Semiconductor - NXP PSMNR89-25YLEX	2.2 V	-55 °C	175 ░C	7452 pF	LFPAK56 Power-SO8	270 A	25 V	0.98 mOhm	120 nC	MOSFET (Metal Oxide)	Surface Mount	SC-100 SOT-669	20 V	N-Channel	224 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 270A (Tc) 224W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources