Discrete Semiconductor Products

PSMN057-200B,118

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MOSFET N-CH 200V 39A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 200V 39A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN057-200B,118

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	96 nC
Input Capacitance (Ciss) (Max) @ Vds	3750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	57 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN057-200B,118	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	39 A	Surface Mount	D2PAK	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	57 mOhm	3750 pF	200 V	250 W	96 nC	N-Channel	10 V
Freescale Semiconductor - NXP PSMN057-200P,127	TO-220-3	39 A	Through Hole	TO-220AB	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	57 mOhm	3750 pF	200 V	250 W	96 nC	N-Channel	10 V

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General part information

N-Channel 200 V 39A (Tc) 250W (Tc) Surface Mount D2PAK

Technical documentation and resources