Discrete Semiconductor Products

DMN3730U-7

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TRANS MOSFET N-CH 30V 0.94A 3-PIN SOT-23 T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET N-CH 30V 0.94A 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3730U-7

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	64.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	450 mW
Rds On (Max) @ Id, Vgs	460 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

NRND = Not Recommended for New Design

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]
Diodes Inc DMN3730U-7	30 V	1.6 nC	SC-59 SOT-23-3 TO-236-3	750 mA	64.3 pF	450 mW	SOT-23-3	Surface Mount	-55 °C	150 °C	460 mOhm	950 mV	1.8 V 4.5 V	MOSFET (Metal Oxide)	8 V	N-Channel
Diodes Inc DMN3730UFB4-7	30 V	1.6 nC	3-XFDFN	750 mA	64.3 pF			Surface Mount	-55 °C	150 °C	460 mOhm	950 mV	1.8 V 4.5 V	MOSFET (Metal Oxide)	8 V	N-Channel	470 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources