Specification	RJK0655DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	6.7 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK0655DPB Series

Nch Power MOSFET 60V 35A 6.7mohm LFPAK56

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package
Renesas Electronics Corporation RJK0655DPB-00#J5	150 °C	10 V	60 W	2550 pF	6.7 mOhm	N-Channel	35 A	35 nC	SC-100 SOT-669	MOSFET (Metal Oxide)	20 V	Surface Mount	60 V	LFPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources