Discrete Semiconductor Products

NVLUS4C12NTAG

Obsolete

SINGLE N−CHANNEL ΜCOOL™ POWER MOSFET 30V 10.7A 9MΩ

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SINGLE N−CHANNEL ΜCOOL™ POWER MOSFET 30V 10.7A 9MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NVLUS4C12NTAG

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	3.3 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1172 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	630 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	6-UDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Single N−Channel µCool™ Power MOSFET 30V 10.7A 9mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Grade	Supplier Device Package	Technology	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor NVLUS4C12NTAG	1172 pF	Automotive	6-UDFN (2x2)	MOSFET (Metal Oxide)	AEC-Q101	-55 °C	150 °C	Surface Mount	630 mW	20 V	18 nC	3.3 V	10 V	9 mOhm	N-Channel	6-UDFN Exposed Pad	30 V	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET30 V, 10.7 A, Single N−Channel,2.0x2.0x0.55 mm µCool™ UDFN6 Package

Technical documentation and resources

No documents available