Discrete Semiconductor Products

AO4616L_103

Obsolete

MOSFET N/P-CH 30V 8.1A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 8.1A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4616L_103

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	8.1 A, 7.1 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	19.2 nC, 30.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1250 pF, 1573 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	25 mOhm, 20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V, 2.7 V

Part	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Package / Case	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Alpha & Omega Semiconductor Inc. AO4616L_103	MOSFET (Metal Oxide)	20 mOhm 25 mOhm	2.7 V 3 V	1250 pF 1573 pF	Surface Mount	150 °C	-55 °C	7.1 A 8.1 A	8-SOIC	N and P-Channel	0.154 in	8-SOIC	3.9 mm	30 V	2 W	19.2 nC 30.9 nC
Alpha & Omega Semiconductor Inc. AO4618	MOSFET (Metal Oxide)	19 mOhm	2.4 V		Surface Mount	150 °C	-55 °C	7 A 8 A	8-SOIC	N and P-Channel	0.154 in	8-SOIC	3.9 mm	40 V	2 W		Logic Level Gate	12 nC	415 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 8.1A (Ta), 7.1A (Ta) 2W Surface Mount 8-SOIC

Technical documentation and resources