Discrete Semiconductor Products

IXFB210N30P3

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-POLAR3 TO-264(3)

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Discrete Semiconductor Products

IXFB210N30P3

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-POLAR3 TO-264(3)

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB210N30P3

Current - Continuous Drain (Id) @ 25°C	210 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	268 nC
Input Capacitance (Ciss) (Max) @ Vds	16200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1890 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFB210N30P3 Series

DiscMosfetN-CH HiPerFET-Polar TO-264(3)

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXFB210N20P	PLUS264™	10 V	1500 W	4.5 V	255 nC	N-Channel	MOSFET (Metal Oxide)	200 V	20 V	10.5 mOhm	-55 °C	175 ░C	Through Hole	18600 pF	TO-264-3 TO-264AA	210 A
Littelfuse/Commercial Vehicle Products IXFB210N30P3	PLUS264™	10 V		5 V	268 nC	N-Channel	MOSFET (Metal Oxide)	300 V	20 V	14.5 mOhm	-55 °C	150 °C	Through Hole		TO-264-3 TO-264AA	210 A	1890 W	16200 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 31.09
		10	$ 22.84
		100	$ 19.60

Description

General part information

IXFB210N30P3 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources