Discrete Semiconductor Products

IMB9AT110

NRND

TRANS PREBIAS DUAL PNP SMT6

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Discrete Semiconductor Products

NRND

TRANS PREBIAS DUAL PNP SMT6

Technical Specifications

Parameters and characteristics for this part

Specification	IMB9AT110

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	300 mW
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SMT6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Resistor - Emitter Base (R2)	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Rohm Semiconductor IMB9AT110	68	SMT6	250 MHz	500 nA	Surface Mount	47000 Ohms	2 PNP - Pre-Biased (Dual)	SC-74 SOT-457	300 mV	300 mW	100 mA	50 V

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General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

Technical documentation and resources