DMT15H053SPSWQ-13

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150V N-CHANNEL ENHANCEMENT MODE MOSFET

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Discrete Semiconductor Products

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150V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMT15H053SPSWQ-13

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	814 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	1.9 W, 90 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	66 mOhm
Supplier Device Package	PowerDI5060-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

150V N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Qualification	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case
Diodes Inc DMT15H053SPSWQ-13	Surface Mount Wettable Flank	20 V	AEC-Q101	24 A	MOSFET (Metal Oxide)	11.5 nC	66 mOhm	Automotive	814 pF	150 V	10 V	PowerDI5060-8 (Type UX)	4 V	N-Channel	-55 °C	150 °C	1.9 W 90 W	8-PowerTDFN

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General part information

150V N-Channel Enhancement Mode MOSFET

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