Discrete Semiconductor Products

SI7489DP-T1-GE3

Active

MOSFET P-CH 100V 28A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 100V 28A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7489DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5.2 W, 83 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7489DP-T1-E3	Surface Mount	20 V	100 V	5.2 W 83 W	41 mOhm	PowerPAK® SO-8	4600 pF	P-Channel	4.5 V 10 V	PowerPAK® SO-8	160 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	3 V	28 A
Vishay General Semiconductor - Diodes Division SI7489DP-T1-GE3	Surface Mount	20 V	100 V	5.2 W 83 W	41 mOhm	PowerPAK® SO-8	4600 pF	P-Channel	4.5 V 10 V	PowerPAK® SO-8	160 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	3 V	28 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources