Specification	CSD16409Q3

Current - Continuous Drain (Id) @ 25°C	60 A, 15 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.6 W
Rds On (Max) @ Id, Vgs	8.2 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	2.3 V

CSD16409Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 12.4 mOhm

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Supplier Device Package	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
Texas Instruments CSD16409Q3	25 V	2.3 V	-12 V 16 V	8-VSONP (5x6)	8-PowerTDFN	MOSFET (Metal Oxide)	15 A 60 A	-55 °C	150 °C	Surface Mount	8.2 mOhm	4.5 V 10 V	5.6 nC	2.6 W	N-Channel	800 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources