Discrete Semiconductor Products

IRFB18N50KPBF

LTB

MOSFET N-CH 500V 17A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 17A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB18N50KPBF

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	2830 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	220 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Power Dissipation (Max) [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology
Vishay General Semiconductor - Diodes Division IRFB18N50KPBF	N-Channel	220 W	TO-220AB	2830 pF	290 mOhm	Through Hole	120 nC	TO-220-3	30 V	17 A	500 V	10 V	-55 °C	150 °C	5 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 17A (Tc) 220W (Tc) Through Hole TO-220AB

Technical documentation and resources