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AG096FPD3HRBTL

Discrete Semiconductor Products

AG096FPD3HRBTL

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Rohm Semiconductor

NCH 100V 59A, TO-252 (DPAK), POWER MOSFET FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsAG096FPD3HRBTL | Datasheet Precautions When Measuring the Rear of the Package with a Thermocouple +40

AG096FPD3HRBTL

Discrete Semiconductor Products

AG096FPD3HRBTL

Active

Rohm Semiconductor

NCH 100V 59A, TO-252 (DPAK), POWER MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsAG096FPD3HRBTL | Datasheet Precautions When Measuring the Rear of the Package with a Thermocouple +40

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AG096FPD3HRBTL

Current - Continuous Drain (Id) @ 25°C	59 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1110 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	76 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	15.8 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2395	$ 2.37
Newark	Each (Supplied on Cut Tape)	1	$ 1.59
		10	$ 0.98
		25	$ 0.90
		50	$ 0.84
		100	$ 0.78
		250	$ 0.73
		500	$ 0.69
		1000	$ 0.67

Description

General part information

AG096FPD3HRB Series

AG096FPD3HRB is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Automotive Systems

Documents

Technical documentation and resources

AG096FPD3HRBTL | Datasheet

Precautions When Measuring the Rear of the Package with a Thermocouple

Judgment Criteria of Thermal Evaluation

What is a Thermal Model? (Transistor)

About Flammability of Materials

Environmental Data

Basics of Thermal Resistance and Heat Dissipation

Moisture Sensitivity Level - Transistors

Package Information

Explanation for Marking

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

AG096FPD3HRB ESD Data

Characteristics Data

How to Use LTspice® Models

Schematic Design & Verification

Package Dimensions

Package Information

Report of SVHC under REACH Regulation

Environmental Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Method for Monitoring Switching Waveform

Schematic Design & Verification

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Anti-Whisker formation - Transistors

Package Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Two-Resistor Model for Thermal Simulation

Condition of Soldering / Land Pattern Reference

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

How to Use the Thermal Resistance and Thermal Characteristics Parameters

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Report of SVHC under REACH Regulation

Environmental Data

PCB Layout Thermal Design Guide

Notes for Calculating Power Consumption:Static Operation

List of Transistor Package Thermal Resistance

TO-252_TL Taping Information

Package Information

What Is Thermal Design

About Export Regulations

Export Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Part Explanation

Application Note

Measurement Method and Usage of Thermal Resistance RthJC

Types and Features of Transistors

Application Note

AG096FPD3HRB Series

Nch 100V 59A, TO-252 (DPAK), Power MOSFET for Automotive

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Qualification	Mounting Type	FET Type	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Operating Temperature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade
Rohm Semiconductor AG096FPD3HRBTL	59 A	1110 pF	17.3 nC	4.5 V 10 V	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	AEC-Q101	Surface Mount	N-Channel	MOSFET (Metal Oxide)	76 W	TO-252	20 V	175 °C	15.8 mOhm	2.5 V	Automotive