Discrete Semiconductor Products

SIE864DF-T1-GE3

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MOSFET N-CH 30V 45A 10POLARPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 45A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE864DF-T1-GE3

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PolarPAK® (U)
Power Dissipation (Max)	25 W, 5.2 W
Supplier Device Package	10-PolarPAK® (U)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Package / Case	Mounting Type	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Vishay General Semiconductor - Diodes Division SIE864DF-T1-GE3	2 V	5.2 W 25 W	10-PolarPAK® (U)	10-PolarPAK® (U)	Surface Mount	20 V	N-Channel	1510 pF	38 nC	45 A	4.5 V 10 V	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 45A (Tc) 5.2W (Ta), 25W (Tc) Surface Mount 10-PolarPAK® (U)

Technical documentation and resources