Discrete Semiconductor Products

2SK1516-E

LTB

NCH SINGLE POWER MOSFET 500V 10A 900MOHM TO-3P

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

NCH SINGLE POWER MOSFET 500V 10A 900MOHM TO-3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1516-E

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3 V

Nch Single Power Mosfet 500V 10A 900Mohm To-3P

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation 2SK1516-E	30 V	900 mOhm	150 °C	TO-3P	100 W	10 V	MOSFET (Metal Oxide)	10 A	SC-65-3 TO-3P-3	N-Channel	3 V	1100 pF	Through Hole	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 11.61

General part information

The 2SK1516 is a Nch Single Power Mosfet 500V 10A 900Mohm To-3P.

Technical documentation and resources